Directed self-assembling composition for pattern formation, and pattern-forming method

ABSTRACT

A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of InternationalApplication No. PCT/JP2012/078394, filed Nov. 1, 2012, which claimspriority to Japanese Patent Application No. 2011-245991, filed Nov. 9,2011, and to Japanese Patent Application No. 2012-180689, filed Aug. 16,2012. The contents of these applications are incorporated herein byreference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a directed self-assembling compositionfor pattern formation, and a pattern-forming method.

2. Discussion of the Background

Miniaturization of various types of electronic device structures such assemiconductor devices and liquid crystal devices has been accompanied bydemands for miniaturization of patterns in lithography processes. Atpresent, although fine resist patterns having a line width of about 90nm can be formed using, for example, an ArF excimer laser light, furtherfiner pattern formation is required.

To meet the demands described above, some pattern-forming methods inwhich a phase separation structure by directed self-assembling, asgenerally referred to, is utilized that spontaneously forms an orderedpattern have been proposed. For example, an ultrafine pattern-formingmethod by directed self-assembling has been known in which a blockcopolymer is used which is obtained by copolymerizing a monomer compoundhaving one property with a monomer compound having a property that isdistinct from the one property (see Japanese Unexamined PatentApplication, Publication No. 2008-149447, Japanese Unexamined PatentApplication (Translation of PCT Application), Publication No.2002-519728, and Japanese Unexamined Patent Application, Publication No.2003-218383). According to this method, annealing of a compositioncontaining the block copolymer results in a tendency of clustering ofpolymer structures having the same property, and thus a pattern can beformed in a self-aligning manner. In addition, a method of forming afine pattern by permitting directed self-assembling of a compositionthat contains a plurality of polymers having properties that aredifferent from one another has been also known (see US PatentApplication, Publication No. 2009/0214823, and Japanese UnexaminedPatent Application, Publication No. 2010-58403).

SUMMARY OF THE INVENTION

According to one aspect of the present invention, a directedself-assembling composition for pattern formation includes a blockcopolymer. The block copolymer includes a polystyrene block having astyrene unit, and a polyalkyl (meth)acrylate block having an alkyl(meth)acrylate unit. The block copolymer has a group that is bound to atleast one end of a main chain of the block copolymer and that includes ahetero atom.

According to another aspect of the present invention, a pattern-formingmethod includes providing a directed self-assembling film having a phaseseparation structure on a substrate using the directed self-assemblingcomposition for pattern formation. A part of phases of the directedself-assembling film is removed.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will be readily obtained as the same becomes betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings.

FIG. 1 shows a schematic view illustrating one example of a state afterproviding an underlayer film on a substrate in the pattern-formingmethod according to an embodiment of the present invention;

FIG. 2 shows a schematic view illustrating one example of a state afterforming a prepattern on the underlayer film in the pattern-formingmethod according to the embodiment of the present invention;

FIG. 3 shows a schematic view illustrating one example of a state aftercoating a directed self-assembling composition for pattern formation ona region surrounded by the prepattern on the underlayer film in thepattern-forming method according to the embodiment of the presentinvention;

FIG. 4 shows a schematic view illustrating one example of a state afterproviding the directed self-assembling film on a region surrounded bythe prepattern on the underlayer film in the pattern-forming methodaccording to the embodiment of the present invention; and

FIG. 5 shows a schematic view illustrating one example of a state afterremoving a part of phases of the directed self-assembling film and theprepattern in the pattern-forming method according to the embodiment ofthe present invention.

DESCRIPTION OF THE EMBODIMENTS

According to a first embodiment of the invention made for solving theaforementioned problems, a directed self-assembling composition forpattern formation comprises:

(A) a block copolymer that includes a polystyrene block having a styreneunit, and a polyalkyl (meth)acrylate block having an alkyl(meth)acrylate unit (hereinafter, may be also referred to as “blockcopolymer (A)”),

the block copolymer (A) having (a) a group that is bound to at least oneend of a main chain and includes a hetero atom.

The directed self-assembling composition for pattern formation is likelyto cause phase separation due to the group (α) that is bound to at leastone end of a main chain and includes a hetero atom included in the blockcopolymer (A); therefore, a sufficiently fine pattern can be formed. Inaddition, due to having the group (α) that includes a hetero atom, thepattern configurations are stabilized, and a decrease of variation ofpattern size is enabled. It is to be noted that an “end” as referred toin “at least one end of a main chain” means an endmost carbon atom of apolymer main chain moiety produced by synthesis of a polymer obtained bypolymerizing the monomer.

The hetero atom is preferably an oxygen atom, a nitrogen atom, a sulfuratom, a phosphorus atom, a tin atom, a silicon atom or a combinationthereof. When the block copolymer (A) has the group (α) that is bound toat least one end of a main chain and includes any one of these heteroatoms, phase separation is more likely to occur.

The group (α) is preferably represented by the following formula (1):

wherein, in the formula (1), R′ represents a single bond or a divalentorganic group having 1 to 30 carbon atoms; and R² represents a hydrogenatom or a monovalent organic group having 1 to 30 carbon atoms.

In the directed self-assembling composition for pattern formation, dueto the block copolymer (A) having the group (α) that is bound to atleast one end of a main chain and is represented by the above formula,phase separation is more likely to occur; therefore, a sufficiently fineand favorable pattern can be formed.

The alkyl (meth)acrylate unit is preferably a methyl methacrylate unit.The directed self-assembling composition for pattern formation is morelikely to cause phase separation due to the alkyl (meth)acrylate unitbeing a methyl methacrylate unit, whereby a sufficiently fine andfavorable pattern can be formed.

The block copolymer (A) is preferably a diblock copolymer or a triblockcopolymer having a polystyrene block and a polyalkyl (meth)acrylateblock. When the block copolymer (A) is the diblock copolymer or triblockcopolymer, the directed self-assembling composition for patternformation is still more likely to cause phase separation; therefore, afine and favorable pattern can be formed.

A molar ratio of styrene units to alkyl (meth)acrylate units in theblock copolymer (A) preferably falls within a range of no less than10/90 and no greater than 90/10. According to the directedself-assembling composition for pattern formation, by selecting a ratioof the percentage content (mol %) of each of the units in the blockcopolymer (A) to fall within the above specific range, a fine andcomplicated pattern desired can be favorably formed.

The group (α) is preferably derived from an epoxy compound. For example,by using the epoxy compound, the group (α) that is a group derived froman epoxy compound can be readily introduced to a polymerization end ofthe block copolymer. In addition, when the group (α) is a group derivedfrom an epoxy compound, the directed self-assembling composition forpattern formation is more likely to cause phase separation, whereby afine and favorable pattern can be formed.

According to another embodiment of the present invention, apattern-forming method includes the steps of:

(1) providing a directed self-assembling film having a phase separationstructure on a substrate using the directed self-assembling compositionfor pattern formation of the first embodiment of the present invention;and

(2) removing a part of phases of the directed self-assembling film.

In the pattern-forming method according to the another embodiment of thepresent invention, a directed self-assembling film is provided using thedirected self-assembling composition for pattern formation; therefore, asufficiently fine pattern can be formed.

It is preferred that the pattern-forming method according to the anotherembodiment of the present invention further includes before the step(1):

(0-1) providing an underlayer film on the substrate; and

(0-2) forming a prepattern on the underlayer film, and

in the step (1), the directed self-assembling film is provided in aregion compartmentalized by the prepattern on the underlayer

film,

and that the method further includes after the step (1),

(2′) removing the prepattern.

When the pattern-forming method according to the another embodiment ofthe present invention further includes the steps of providing anunderlayer film and forming a prepattern, phase separation of thedirected self-assembling composition for pattern formation can be moreprecisely controlled, whereby the resultant pattern can be finer. It isto be noted that the prepattern as referred to means so-called guidepattern, which is a pattern for controlling both position andorientation of the phase separation of the block copolymer.

The pattern obtained by the pattern-forming method according to theanother embodiment of the present invention is preferably aline-and-space pattern or a hole pattern. According to thepattern-forming method, a finer line-and-space pattern or a hole patterndesired can be formed.

According to embodiments of the present invention, a directedself-assembling composition for pattern formation that enables asufficiently fine pattern to be formed, and a pattern-forming method inwhich the composition is used are provided. The directed self-assemblingcomposition for pattern formation and the pattern-forming method of theembodiments of the present invention can be suitably used forlithography processes in manufacture of various types of electronicdevices such as semiconductor devices and liquid crystal devices forwhich further miniaturization is demanded.

The embodiments will now be described with reference to the accompanyingdrawings, wherein like reference numerals designate corresponding oridentical elements throughout the various drawings.

Directed Self-Assembling Composition for Pattern Formation

Directed self-assembling as referred to means a phenomenon ofspontaneously constructing a tissue or structure without resulting fromonly the control from an external factor. According to the embodiment ofthe present invention, a film having a phase separation structure bydirected self-assembling (i.e., directed self-assembling film) is formedby coating a directed self-assembling composition for pattern formationon a substrate, and a part of phases in the directed self-assemblingfilm are removed, thereby enabling a pattern to be formed.

The directed self-assembling composition for pattern formation accordingto the embodiment of the present invention contains (A) a blockcopolymer that includes a polystyrene block having a styrene unit, and apolyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit, inwhich the block copolymer (A) has a group (α) that is bound to at leastone end of a main chain and includes a hetero atom. It is to be notedthat the expression of “(meth)acrylate” as used herein means bothmethacrylate and acrylate. Since the directed self-assemblingcomposition for pattern formation contains the block copolymer (A)having the group (α) that includes a hetero atom on at at least one endof a main chain of the polymer, phase separation is likely to occur,whereby a pattern having a sufficiently fine microdomain structure canbe formed. The directed self-assembling composition for patternformation may contain optional components such as a solvent and asurfactant in addition to the block copolymer (A), within a range notleading to impairment of the effects of the present invention.

Hereinafter, each component will be explained in detail.

Block Copolymer (A)

The block copolymer (A) includes a polystyrene block having a styreneunit, and a polyalkyl (meth)acrylate block having an alkyl(meth)acrylate unit. The block copolymer (A) has the group (α) that isbound to at least one end of a main chain of the block copolymer (A) andhas a hetero atom.

The block copolymer (A) has a structure in which a plurality of blocksat least including a polystyrene block and a polyalkyl (meth)acrylateblock are linked. Each of the blocks has a chain structure of unitsderived from one type of monomer. In other words, the polystyrene blockhas a chain structure of styrene units, whereas the polyalkyl(meth)acrylate block has a chain structure of alkyl (meth)acrylateunits. When the block copolymer (A) having such a plurality of blocks isdissolved in an appropriate solvent, the same type of blocks areaggregated to one another, and thus phases configured with the same typeof the block are formed. In this step, it is presumed that a phaseseparation structure having an ordered pattern in which different typesof phases are periodically and alternately repeated can be formed sincethe phases formed with different types of the blocks are not admixedwith each other.

The block copolymer (A) may be composed only of the polystyrene blockand the polyalkyl (meth)acrylate block, or may further include inaddition to the polystyrene block and the polyalkyl (meth)acrylateblock, any block other than these. However, in light of possibleformation of a pattern having a finer microdomain structure, a blockcopolymer composed only of the polystyrene block and the polyalkyl(meth)acrylate block is preferred.

The block copolymer (A) composed only of the polystyrene block and thepolyalkyl (meth)acrylate block is exemplified by diblock copolymers,triblock copolymers, tetrablock copolymers, and the like. Of these, inlight of a capability of easy formation of a pattern having a finemicrodomain structure desired, diblock copolymers and triblockcopolymers are preferred, and diblock copolymers are more preferred.

The diblock copolymer is exemplified by a copolymer having a structureof a polystyrene blocks polyalkyl (meth)acrylate block, and inparticular, diblock copolymers having a structure in which the group (α)is bound to an end of a main chain of the polyalkyl (meth)acrylate blockare preferred.

The triblock copolymer is exemplified by a copolymer having a structureof a polystyrene block—polyalkyl (meth)acrylate block—polystyrene block,or a polyalkyl (meth)acrylate block—polystyrene block—polyalkyl(meth)acrylate block.

The tetrablock copolymer is exemplified by a copolymer having astructure of a polystyrene block—polyalkyl (meth)acrylateblock—polystyrene block—polyalkyl (meth)acrylate block.

Of these, in light of a capability of easy formation of a pattern havinga fine microdomain structure desired, diblock copolymers and triblockcopolymers are preferred, and diblock copolymers are more preferred.Diblock copolymers having a structure of a polystyrene block—polyalkyl(meth)acrylate block, and also having a structure in which the group (α)is bound to an end of a main chain of a polyalkyl (meth)acrylate blockare still more preferred.

The polystyrene block has a styrene unit, and can be synthesized bypolymerizing styrene. Further, the polyalkyl (meth)acrylate block has analkyl (meth)acrylate unit, and can be synthesized by polymerizing alkyl(meth)acrylate.

As styrene described above, a styrene compound produced by substitutinga part or all of hydrogen atoms included in styrene with a substituentmay be also used.

As alkyl (meth)acrylate described above, alkyl (meth)acrylate having analkyl group having 1 to 4 carbon atoms is preferred, which isexemplified by methyl methacrylate, ethyl methacrylate, propylmethacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate,propyl acrylate, butyl acrylate, and the like. It is to be noted that apart or all of hydrogen atoms included in alkyl (meth)acrylate describedabove may be substituted with a substituent. Of these, alkyl(meth)acrylate is preferably methyl methacrylate.

Examples of the other block include (meth)acrylic blocks other than thepolyalkyl (meth)acrylate blocks, and polyvinyl acetal blocks,polyurethane blocks, polyurea blocks, polyimide blocks, polyamideblocks, epoxy blocks, novolak phenol blocks, polyester blocks, and thelike. The percentage content of the other block in the block copolymer(A) is preferably no greater than 10 mol % with respect to allstructural units in the copolymer.

The molar ratio of the styrene unit to the polyalkyl (meth)acrylate unitin the block copolymer (A) is preferably no less than 10/90 and nogreater than 90/10, more preferably no less than 20/80 and no greaterthan 80/20, and still more preferably no less than 30/70 and no greaterthan 70/30. When the ratio of the percentage content of (mol %) of thestyrene unit to the percentage content of (mol %) of the polyalkyl(meth)acrylate unit in the block copolymer (A) falls within the abovespecific range, the directed self-assembling composition for patternformation enables a pattern having a finer and favorable microdomainstructure to be formed.

The block copolymer (A) can be synthesized by preparing the polystyreneblock and the polyalkyl (meth)acrylate block, and further as needed,other block in a desired order, followed by subjecting itspolymerization end to a treatment with an appropriate end treatmentagent so as to introduce the group (α). Due to the structure of theblock copolymer (A) having the group (α) on at least one end of a mainchain, phase separation is more likely to occur, whereby the directedself-assembling composition for pattern formation enables a patternhaving a still finer and favorable microdomain structure to be formed,as compared with conventional compositions.

Although the hetero atom in the group (α) that includes a hetero atom isnot particularly limited, an oxygen atom, a nitrogen atom, a sulfuratom, a phosphorus atom, a tin atom, a silicon atom or a combinationthereof is preferred, and an oxygen atom, a nitrogen atom and a sulfuratom are more preferred. An oxygen atom is still more preferred as thehetero atom.

The group (α) is preferably a group represented by the above formula(1).

In the above formula (1), R¹ represents a single bond or a divalentorganic group having 1 to 30 carbon atoms; and R² represents a hydrogenatom or a monovalent organic group having 1 to 30 carbon atoms.

The divalent organic group having 1 to 30 carbon atoms represented byR^(I) is exemplified by an aliphatic linear hydrocarbon group having 1to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbonatoms, an aromatic hydrocarbon group having 6 to 30 carbon atoms, agroup including any of the aliphatic linear hydrocarbon group having 1to 30 carbon atoms, the alicyclic hydrocarbon group having 3 to 30carbon atoms and the aromatic hydrocarbon group having 6 to 30 carbonatoms, further having a hetero atom such as an oxygen atom or a nitrogenatom between adjacent two carbon atoms, and the like.

Examples of the aliphatic linear hydrocarbon group having 1 to 30 carbonatoms include a methylene group, an ethanediyl group, a n-propanediylgroup, an i-propanediyl group, a n-butanediyl group, an i-butanediylgroup, a n-pentanediyl group, an i-pentanediyl group, a n-hexanediylgroup, an i-hexanediyl group, and the like. Of these, in light of easieroccurrence of phase separation of the directed self-assemblingcomposition for pattern formation, a methylene group or an ethanediylgroup is preferred, and a methylene group is more preferred.

Examples of the alicyclic hydrocarbon group having 3 to 30 carbon atomsinclude a cyclopropanediyl group, a cyclobutanediyl group, acyclopentanediyl group, a cyclohexanediyl group, a cyclooctanediylgroup, a norbornanediyl group, an adamantanediyl group, and the like.

Examples of the aromatic hydrocarbon group having 6 to 30 carbon atomsinclude a phenylene group, a naphthalenylene group, an anthracenylenegroup, and the like.

In addition, examples of the group including any of the aliphatic linearhydrocarbon group having 1 to 30 carbon atoms, the alicyclic hydrocarbongroup having 3 to 30 carbon atoms and the aromatic hydrocarbon grouphaving 6 to 30 carbon atoms, further having a hetero atom such as anoxygen atom or a nitrogen atom between adjacent two carbon atoms includegroups that include a binding group having at least one hetero atom suchas —O—, —CO—, —COO—, —OCO— or —NH— between adjacent two carbon atoms ofthe above hydrocarbon groups, and the like.

R¹ in the above formula preferably represents a single bond or analiphatic linear hydrocarbon group having 1 to 30 carbon atoms, morepreferably a methylene group or an ethanediyl group, and still morepreferably a methylene group.

The monovalent organic group having 1 to 30 carbon atoms represented byR² is exemplified by an aliphatic linear hydrocarbon group having 1 to30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbonatoms, an aromatic hydrocarbon group having 6 to 30 carbon atoms, agroup including any of these hydrocarbon groups further having a heteroatom such as an oxygen atom or a nitrogen atom between adjacent twocarbon atoms, and the like.

Examples of the aliphatic linear hydrocarbon group having 1 to 30 carbonatoms include a methyl group, an ethyl group, a n-propyl group, ani-propyl group, a n-butyl group, an i-butyl group, a n-pentyl group, ani-pentyl group, a n-hexyl group, an i-hexyl group, and the like.

Examples of the alicyclic hydrocarbon group having 3 to 30 carbon atomsinclude a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, acyclohexyl group, a cyclooctyl group, a norbornyl group, an adamantylgroup, and the like.

Examples of the aromatic hydrocarbon group having 6 to 30 carbon atomsinclude a phenyl group, a naphthalenyl group, an anthracenyl group, andthe like.

In addition, examples of the group including any of the aliphatic linearhydrocarbon group having 1 to 30 carbon atoms, the alicyclic hydrocarbongroup having 3 to 30 carbon atoms and the aromatic hydrocarbon grouphaving 6 to 30 carbon atoms, further having a hetero atom such as anoxygen atom or a nitrogen atom between adjacent two carbon atoms includegroups that include a binding group having at least one hetero atom suchas —O—, —CO—, —COO—, —OCO— or —NH— between adjacent two carbon atoms ofthe above hydrocarbon groups, a and the like.

R² in the above formula is preferably a hydrogen atom, an aliphaticlinear hydrocarbon group having 1 to 30 carbon atoms, and an aliphaticlinear hydrocarbon group having 1 to 30 carbon atoms having —O— betweenadjacent two carbon atoms, and more preferably a hydrogen atom, analiphatic linear hydrocarbon group having 1 to 3 carbon atoms, and analiphatic linear hydrocarbon group having 1 to 10 carbon atoms having—O— between adjacent two carbon atoms.

Examples of the group (α) include structures represented by thefollowing formulae, and the like.

In the above formula, R represents a hydrogen atom or a monovalentorganic group; * denotes a site that binds to a carbon atom of the mainchain end of the polymer in the block copolymer (A).

Of these, as the group represented by the above formula (1), groupsrepresented by the formulae (1-1) to (1-7) are preferred, and groupsrepresented by the formulae (1-2), (1-3) and (1-4) are more preferred.

The block to which the group (α) of the block copolymer (A) binds may bethe polystyrene block or the polyalkyl (meth)acrylate block, or theother block, but the polystyrene block or the polyalkyl (meth)acrylateblock is preferred, and the polyalkyl (meth)acrylate block is morepreferred. Due to having the structure in which the group (α) is boundto the end of the main chain of these blocks, the directedself-assembling composition for pattern formation enables a patternhaving a finer and favorable microdomain structure to be formed.

Synthesis Method of Block Copolymer (A)

The block copolymer (A) may be synthesized by living anionicpolymerization, living radical polymerization or the like, and of these,living anionic polymerization that enables an arbitrary end structure tobe readily introduced is more preferred. For example, the blockcopolymer (A) may be synthesized by linking the polystyrene block, apolymethyl methacrylate block and a block other than these blocks arelinked in a desired order while permitting polymerization, treating thusresultant polymerization end with an arbitrary end treatment agent, andintroducing the group (α) such as a group represented by the aboveformula (1).

For example, when the block copolymer (A) that is a diblock copolymerconstituted with the polystyrene block and the polymethyl methacrylateblock is to be synthesized, the polystyrene block is first synthesizedby polymerizing styrene using an anion polymerization initiator in anappropriate solvent. Next, methyl methacrylate is similarly polymerizedto synthesize the polymethyl methacrylate block so as to link to thepolystyrene block. Thereafter, the group (α) can be introduced to endsof main chains of the polymethyl methacrylate block by carrying out atreatment with an end treatment agent such as 1,2-butylene oxide. It isto be noted that for synthesizing each block, for example, a method inwhich a solution containing a monomer is added to a reaction solventcontaining an initiator dropwise to allow for a polymerization reaction,or the like may be employed.

Examples of the solvent for use in the polymerization include:

alkanes such as n-pentane, n-hexane, n-heptane, n-octane, n-nonane andn-decane;

cycloalkanes such as cyclohexane, cycloheptane, cyclooctane, decalin andnorbornane;

aromatic hydrocarbons such as benzene, toluene, xylene, ethylbenzene andcumene;

halogenated hydrocarbons such as chlorobutanes, bromohexanes,dichloroethanes, hexamethylenedibromide and chlorobenzene;

saturated carboxylate esters such as ethyl acetate, n-butyl acetate,i-butyl acetate and methyl propionate;

ketones such as acetone, 2-butanone, 4-methyl-2-pentanone and2-heptanone; ethers such as tetrahydrofuran, diethoxyethanes anddiethoxyethanes;

alcohols such as methanol, ethanol, 1-propanol, 2-propanol and4-methyl-2-pentanol, and the like.

These solvents may be used either alone, or two or more types thereofmay be used in combination.

The reaction temperature in the polymerization may be appropriatelypredetermined in accordance with the type of the initiator, and thereaction temperature is typically −150° C. to 50° C., and preferably−80° C. to 40° C. The reaction time period is typically 5 min to 24 hrs,and preferably 20 min to 12 hrs.

Examples of the initiator for use in the polymerization include alkyllithium, alkyl magnesium halide, naphthalene sodium, alkylatedlanthanoid compounds, and the like. Of these, when the polymerization iscarried out using styrene and methyl methacrylate as monomers, an alkyllithium compound is preferably used.

An exemplary procedure for the end treatment may be to execute areaction as shown in the following scheme, and the like. Morespecifically, the end treatment agent such as 1,2-butylene oxide isadded to a resultant block copolymer to modify the end, and then ademetallation treatment with an acid or the like is carried out, wherebya block copolymer having, for example the group (α) represented by theabove formula (1) at the end can be obtained.

In the above scheme, n and m are each an integer of 10 to 5,000.

Examples of the end treatment agent include:

epoxy compounds such as 1,2-butylene oxide, butyl glycidyl ether,2-ethylhexyl glycidyl ether, propylene oxide, ethylene oxide andepoxyamine;

nitrogen-containing compounds such as isocyanate compounds,thioisocyanate compounds, imidazolidinone, imidazole, aminoketone,pyrrolidone, diethylaminobenzophenone, nitrile compounds, aziridine,formamide, epoxyamine, benzylamine, oxime compounds, azine, hydrazone,imine, azocarboxylate esters, aminostyrene, vinylpyridine,aminoacrylate, aminodiphenyl ethylene and imide compounds;

silane compounds such as alkoxysilane, aminosilane, ketoiminosilane,isocyanatosilane, siloxane, glycidylsilane, mercaptosilane, vinylsilane,epoxysilane, pyridylsilane, piperazylsilane, pyrrolidonesilane,cyanosilane and silane isocyanate;

tin halides, silicon halides, carbon dioxides, and the like. Of these,epoxy compounds are preferred, and 1,2-butylene oxide, butyl glycidylether, 2-ethylhexyl glycidyl ether and propylene oxide are morepreferred.

The block copolymer (A) subjected to the end treatment is preferablyrecovered by a reprecipitation technique. More specifically, aftercompleting the end treatment reaction, the reaction liquid is chargedinto a reprecipitation solvent to recover the intended copolymer in theform of powder. As the reprecipitation solvent, an alcohol, an alkaneand the like may be used either alone or as a mixture of two or morethereof. As an alternative to the reprecipitation technique, a liquidseparating operation, column operation, ultrafiltration operation or thelike may be employed to recover the polymer through eliminating lowmolecular components such as monomers and oligomers.

The weight average molecular weight (Mw) as determined by gel permeationchromatography (GPC) of the block copolymer (A) is preferably 1,000 to150,000, more preferably 1,500 to 120,000, and still more preferably2,000 to 100,000. When the block copolymer (A) has Mw falling within theabove specific range, the directed self-assembling composition forpattern formation enables a pattern having a finer and favorablemicrodomain structure to be formed.

The ratio (Mw/Mn) of Mw to the number average molecular weight (Mn) ofthe block copolymer (A) is typically 1 to 5, preferably 1 to 3, morepreferably 1 to 2, still more preferably 1 to 1.5, and particularlypreferably 1 to 1.2. When the ratio Mw/Mn falls within such a specificrange, the directed self-assembling composition for pattern formationenables a pattern having a still finer and favorable microdomainstructure to be formed.

Mw and Mn are determined by gel permeation chromatography (GPC) using:GPC columns (G2000HXL×2, G3000HXL×1, G4000HXL×1, all manufactured byTosoh Corporation); a differential refractometer as a detector; andmono-dispersed polystyrene as a standard, under analytical conditionsinvolving a flow rate of 1.0 mL/min, with an elution solvent oftetrahydrofuran, the sample concentration of 1.0% by mass, and theamount of an injected sample of 100 μL, at a column temperature of 40°C.

Solvent

The directed self-assembling composition for pattern formation usuallycontains a solvent. Examples of the solvent include those similar to thesolvents exemplified in connection with, for example, the solvent foruse in the synthesis method of the block copolymer (A). Of these,propylene glycol monomethyl ether acetate is preferred. It is to benoted that these solvents may be used either alone, or two or more typesthereof may be used in combination.

Surfactant

The directed self-assembling composition for pattern formation mayfurther contain a surfactant. Due to containing the surfactant, thedirected self-assembling composition for pattern formation enablescoating properties onto the substrate and the like to be improved.

Preparation Method of Directed Self-Assembling Composition for PatternFormation

The directed self-assembling composition for pattern formation may beprepared by, for example, mixing the block copolymer (A), the surfactantand the like in the solvent at a predetermined ratio. Furthermore, thedirected self-assembling composition for pattern formation may beprepared and used in a state being dissolved or dispersed in anappropriate solvent.

Pattern-Forming Method

The pattern-forming method according to an embodiment of the presentinvention includes the steps of:

(1) providing a directed self-assembling film having a phase separationstructure on a substrate using the directed self-assembling compositionfor pattern formation of the embodiment of the present invention and

(2) removing a part of phases of the directed self-assembling film.

It is preferred that the pattern-forming method according to the anotherembodiment of the present invention further includes before the step(1): (0-1) providing an underlayer film on a substrate; and (0-2)forming a prepattern on the underlayer film, and in the step (1), thedirected self-assembling film is provided in a region compartmentalizedby the prepattern on the underlayer film, and that the method furtherincludes after the step (1), (2′) removing the prepattern.

In addition, it is preferred that the method further includes after thestep (2), the step of (3) etching the substrate using the formed patternas a mask. Each step will be described in detail below. Note that eachstep will be explained with reference to FIGS. 1 to 5.

Step (0-1)

According to this step, a composition for forming an underlayer film isused to provide an underlayer film on the substrate. Thus, as shown inFIG. 1, a substrate having an underlayer film can be obtained whichincludes the underlayer film 102 provided on the substrate 101, and thedirected self-assembling film is provided on the underlayer film 102.The phase separation structure (microdomain structure) included in thedirected self-assembling film is altered by not only an interactionbetween each block of the block copolymer (A) contained in the directedself-assembling composition for pattern formation but also aninteraction with the underlayer film 102; therefore, the structure canbe easily controlled by virture of having the underlayer film 102, andthus a desired pattern can be obtained. Moreover, when the directedself-assembling film is thin, a transfer process thereof can be improvedowing to having the underlayer film 102.

As the substrate 101, for example, a conventionally well-known substratesuch as a silicon wafer, a wafer coated with aluminum or the like may beused.

Also, as the composition for forming an underlayer film, aconventionally well-known organic material for forming an underlayerfilm may be used.

Although the procedure for providing the underlayer film 102 is notparticularly limited, the underlayer film 102 may be provided by, forexample, coating by a well-known method such as a spin coating method onthe substrate 101 to give a coating film, followed by exposure and/orheating to permit curing. Examples of the radioactive ray which may beemployed for the exposure include visible light rays, ultraviolet rays,far ultraviolet rays, X-rays, electron beams, γ-rays, molecular beams,ion beams, and the like. Moreover, the temperature employed duringheating the coating film is not particularly limited, and thetemperature is preferably 90 to 550° C., more preferably 90 to 450° C.,and still more preferably 90 to 300° C. Furthermore, the film thicknessof the underlayer film 102 is not particularly limited, and the filmthickness is preferably 50 to 20,000 nm, and more preferably 70 to 1,000nm. Still further, the underlayer film 102 preferably includes an SOC(Spin on carbon) film.

Step (0-2)

According to this step, as shown in FIG. 2, a prepattern 103 is formedon the underlayer film 102 using a composition for prepattern formation.The prepattern 103 allows a pattern configuration obtained by phaseseparation of the directed self-assembling composition for patternformation to be controlled, and thus a desired fine pattern can beformed. More specifically, among the blocks included in the blockcopolymer (A) contained in the directed self-assembling composition forpattern formation, blocks having a higher affinity to lateral faces ofthe prepattern form the phases along the prepattern, whereas blockshaving a lower affinity form the phases at positions away from theprepattern. Accordingly, a desired pattern can be formed. In addition,according to the material, size, shape, etc., of the prepattern, thestructure of the pattern obtained by obtained by phase separation of thedirected self-assembling composition for pattern formation can be finelycontrolled. It is to be noted that the prepattern may be appropriatelyselected depending on the pattern intended to be finally formed, forexample, a line-and-space pattern, a hole pattern and the like may beemployed.

As the method for forming the prepattern 103, those similar towell-known resist pattern-forming methods may be used. In addition, aconventional composition for forming a resist film may be used as thecomposition for prepattern formation. In a specific method for formingthe prepattern 103, for example, a commercially available chemicalamplification resist composition is used to provide a resist film on theunderlayer film 102 by coating. Next, an exposure is carried out byirradiating a desired region of the resist film with a radioactive raythrough a mask of a specific pattern. Examples of the radioactive rayinclude ultraviolet rays, far ultraviolet rays, X-rays, charged particlerays, and the like. Of these, far ultraviolet rays typified by ArFexcimer laser beams and KrF excimer laser beams are preferred, and ArFexcimer laser beams are more preferred. Also, the exposure may employ aliquid immersion medium for liquid immersion lithography. Subsequently,post exposure baking (PEB) is carried out, followed by development usinga developer solution such as an alkaline developer solution or anorganic solvent, whereby a desired prepattern 103 can be formed.

It is to be noted that the surface of the prepattern 103 may besubjected to a hydrophobilization treatment or a hydrophilizationtreatment. In specific treatment methods, a hydrogenation treatmentincluding exposing to hydrogen plasma for a certain time period, and thelike may be adopted. An increase of the hydrophobicity or hydrophilicityof the surface of the prepattern 103 enables directed self-assembling ofthe directed self-assembling composition for pattern formation to beaccelerated.

Step (1)

In this step, a directed self-assembling film having a phase separationstructure is provided on the substrate using the directedself-assembling composition for pattern formation. In the case in whichthe underlayer film and the prepattern are not used, the directedself-assembling composition for pattern formation is directly coated onthe substrate to give a coating film, whereby the directedself-assembling film having a phase separation structure is provided.Moreover, in a case in which the underlayer film and the prepattern areused, as shown in FIGS. 3 and 4, the directed self-assemblingcomposition for pattern formation is coated on the region surrounded bythe prepattern 103 on the underlayer film 102 to give the coating film104, whereby a directed self-assembling film 105 having a phaseseparation structure having an interface that is substantiallyperpendicular to the substrate 101 is provided on the underlayer film102 formed on the substrate 101 according to the step (1). Morespecifically, coating on the substrate the directed self-assemblingcomposition for pattern formation containing the block copolymer (A)having two or more types of blocks that are not compatible with eachother, followed by annealing and the like allows blocks having identicalproperties to be assembled with one another to spontaneously form anordered pattern, as generally referred to, and thus enables directedself-assembling to be accelerated. Accordingly, a directedself-assembling film having a phase separation structure such as asea-island structure, a cylinder structure, a co-interconnectedstructure or a lamellar structure can be formed, and these phaseseparation structures preferably have an interface substantiallyperpendicular to the substrate 101. In this step, by using the directedself-assembling composition for pattern formation, occurrence of phaseseparation is facilitated, and therefore, formation of a finer phaseseparation structure (microdomain structure) is enabled.

When the prepattern is involved, the phase separation structure ispreferably formed along the prepattern, and the interface formed by thephase separation is preferably substantially parallel to the lateralface of the prepattern. For example, in a case in which an affinity ofthe styrene block of the block copolymer (A) to the prepattern 103 ishigh, the phases (105 b) of the styrene blocks are linearly formed alongthe prepattern 103, and adjacent thereto, phases (105 a) of thepolymethyl methacrylate blocks and phases (105 b) of the styrene blockare alternately arranged in this order to form a lamellar phaseseparation structure or the like. It is to be noted that the phaseseparation structure formed in this step is configured with a pluralityof phases, and the interface formed by these phases is substantiallyperpendicular, in general; however, the interface per se may notnecessarily be clear. In addition, a desired fine pattern can beobtained by strictly controlling the resultant phase separationstructure depending on a ratio of the length of each block chain(styrene block chain, polymethyl methacrylate block chain, etc.) inmolecules of the block copolymer (A), the length of the molecule of theblock copolymer (A), the prepattern, the underlayer film, and the like.

Although the procedure for providing the coating film 104 by coating thedirected self-assembling composition for pattern formation on thesubstrate is not particularly limited, for example, a procedure in whichthe directed self-assembling composition for pattern formation employedis coated by spin coating or the like, and the like may be involved.Accordingly, the directed self-assembling composition for patternformation is filled between the prepattern 103 on the underlayer film102.

The annealing process may include, for example, heating at a temperatureof 80° C. to 400° C. in an oven, on a hot plate, etc., and the like. Theannealing time period is typically 1 min to 120 min, and preferably 5min to 90 min. The film thickness of the directed self-assembled film150 thus obtained is preferably 0.1 nm to 500 nm, and more preferably0.5 nm to 100 nm.

Step (2)

In this step, as shown in FIGS. 4 and 5, block phases 105 a, a part ofphases of the phase separation structure, included in the directedself-assembling film 105 are removed. The polymethyl methacrylate blockphases 105 a can be removed with an etching treatment by making use ofthe difference in the etching rate of each phase generated by phaseseparation by way of the directed self-assembling. A state afterremoving the polymethyl methacrylate block phases 105 a of the phaseseparation structure, and the prepattern 103 as described later, isshown in FIG. 5. It is to be noted that prior to the etching treatment,irradiation with a radioactive ray may be conducted as needed. As theradioactive ray, in a case in which the phases to be removed by etchingare polymethyl methacrylate block phases, a radioactive ray of 254 nmmay be used. The irradiation with the radioactive ray results indecomposition of the polymethyl methacrylate block phases, wherebyetching can be facilitated.

As the procedure for removing the polymethyl methacrylate block phases105 a of the phase separation structure included in the directedself-assembling film 105, well-known procedures e.g., reactive ionetching (RIE) such as chemical dry etching and chemical wet etching;physical etching such as sputter etching and ion beam etching, and thelike may be exemplified. Of these, reactive ion etching (RIE) ispreferred, and in particular, chemical dry etching using CF₄, O₂ gas orthe like, and chemical wet etching (wet development) using an etchingsolution, a liquid such as an organic solvent or hydrofluoric acid, aremore preferred. Examples of the organic solvent include alkanes such asn-pentane, n-hexane and n-heptane, cycloalkanes such as cyclohexane,cycloheptane and cyclooctane, saturated carboxylate esters such as ethylacetate, n-butyl acetate, i-butyl acetate and methyl propionate, ketonessuch as acetone, 2-butanone, 4-methyl-2-pentanone and 2-heptanone,alcohols such as methanol, ethanol, 1-propanol, 2-propanol and4-methyl-2-pentanol, and the like. These solvents may be used eitheralone, or two or more types thereof may be used in combination.

Step (2′)

In this step, the prepattern 103 is removed as shown in FIGS. 4 and 5.Removal of the prepattern 103 enables a finer and complicated pattern tobe formed. It is to be noted that with respect to the procedure forremoving the prepattern 103, description of the procedure for removing apart of the block phases 105 a of the phase separation structure may beemployed. Also, this step may be carried out concomitantly with the step(2), or may be carried out before or after the step (2).

Step (3)

In this step, after the step (2), using the pattern configured with thepolystyrene block phases 105 b that are a part of the block phases ofthe residual phase separation film as a mask, the underlayer film andthe substrate are etched to permit patterning. After completion of thepatterning onto the substrate, the phases used as a mask are removedfrom the substrate by a dissolving treatment or the like, whereby apatterned substrate (pattern) can be finally obtained. As the procedurefor the etching, the procedure similar to those in the step (2) may beemployed, and the etching gas and the etching solution may beappropriately selected according to the materials of the underlayer filmand the substrate. For example, in a case in which the substrate is asilicon material, a gas mixture of chlorofluorocarbon-containing gas andSF₄, or the like may be used. Also, in a case in which the substrate isa metal film, a gas mixture of BCl₃ and Cl₂, or the like may be used. Itis to be noted that the pattern obtained according to thepattern-forming method is suitably used for semiconductor elements andthe like, and further the semiconductor elements are widely used forLED, solar cells and the like.

EXAMPLES

Hereinafter, the present invention will be explained more specificallyby way of Examples, but the present invention is not limited to theseExamples. Methods of the determination of various types of physicalproperty values are shown below.

Weight Average Molecular Weight (Mw) and Number Average Molecular Weight(Mn)

The Mw and the Mn of the polymer were determined by gel permeationchromatography (GPC) using GPC columns (G2000 HXL×2, G3000 HXL×1, G4000HXL×1) manufactured by Tosoh Corporation under the following conditions.

eluent: tetrahydrofuran (manufactured by Wako Pure Chemical Industries,Ltd.)

flow rate: 1.0 mL/min

sample concentration: 1.0% by mass

amount of injected sample: 100 μL

detector: differential refractometer

standard substance: mono-dispersed polystyrene

¹³C-NMR Analysis:

The ¹³C-NMR analysis was carried out using JNM-EX400 manufactured byJEOL, Ltd., with DMSO-d₆ for use as a solvent for measurement. Thepercentage content of each structural unit in the polymer was calculatedfrom each area ratio of the peak responding to each structural unit onthe spectrum obtained by ¹³C-NMR.

Synthesis of Block Copolymer (A) Synthesis Example 1

After a 500 mL flask, a reaction vessel, was dried under reducedpressure, 200 g of tetrahydrofuran which had been subjected to adistillation dehydrating treatment in a nitrogen atmosphere was charged,and cooled to −78° C. Thereafter, 0.27 g of a 1 N s-butyl lithium(s-BuLi) solution in cyclohexane was charged, and 10.7 g of styrene(0.103 mol) which had been subjected to a distillation dehydratingtreatment was added dropwise thereto over 30 min. During this operation,the internal temperature of the reaction solution was carefully adjustedso as not to be −60° C. or higher. After completion of the dropwiseaddition, the mixture was aged for 30 min, and then 10.3 g of methylmethacrylate (0.103 mol) which had been subjected to a distillationdehydrating treatment was further added dropwise over 30 min, followedby allowing for the reaction for 30 min. Thereafter, 1 g of 1,2-butyleneoxide as an end treatment agent was charged, and the reaction waspermitted. The temperature of the reaction solution was elevated to aroom temperature, and the obtained reaction solution was concentrated.Substitution with propylene glycol methyl ether acetate (PGMEA) wasfollowed by charging 1,000 g of a 2% aqueous oxalic acid solution, andthe mixture was stirred and left to stand. Then an aqueous layer as theunderlayer was eliminated. This operation was repeated three times toeliminate the lithium salt, then 1,000 g of ultra pure water wascharged, and the mixture was stirred, followed by elimination of theaqueous layer as the underlayer. After this operation was repeated threetimes to eliminate oxalic acid, the solution was concentrated and addedinto 500 g of n-hexane dropwise, thereby allowing the polymer to beprecipitated. After a vacuum-filtrated resin was washed with n-hexanetwice, drying under reduced pressure at 60° C. gave 20.5 g of a whiteblock copolymer (A-1).

The block copolymer (A-1) had Mw of 41,200, and Mw/Mn was 1.13. Inaddition, as a result of a ¹³C-NMR analysis, a ratio of a percentagecontent of the styrene units to a percentage content of methylmethacrylate units in the block copolymer (A-1) was 50.1 (mol %): 49.9(mol %). It should be noted that the block copolymer (A-1) was a diblockcopolymer configured with a polystyrene block and a polymethylmethacrylate block, and the end of the polymethyl methacrylate block wasmodified with the end treatment agent.

Synthesis Examples 2 to 8

Diblock copolymers (A-2) to (A-6) and (a-1) to (a-2) were synthesized ina similar manner to Synthesis Example 1 except that the amount of the 1N s-BuLi solution in cyclohexane used, and the type of the end treatmentagent were as shown in Table 1. The percentage content of the styreneunit, and the percentage content of the methyl methacrylate unit, Mw andMw/Mn in the each block copolymer are shown in Table 1.

TABLE 1 Amount of Percentage content 1N s-BuLi (mol %) solution in Endmethyl (A) cyclohexane treatment styrene methacrylate Component Type (g)agent unit unit Mw Mw/Mn Synthesis A-1 diblock 0.27 1,2- 50.1 49.941,200 1.13 Example 1 form butylene oxide Synthesis A-2 diblock 0.231,2- 50.3 49.7 55,000 1.09 Example 2 form butylene oxide Synthesis A-3diblock 0.15 1,2- 49.8 50.2 81,200 1.15 Example 3 form butylene oxideSynthesis A-4 diblock 0.29 butyl 50.5 49.5 45,800 1.14 Example 4 formglycidyl ether Synthesis A-5 diblock 0.20 propylene 50.3 49.7 71,3001.08 Example 5 form oxide Synthesis A-6 diblock 0.09 1,2- 49.6 50.4134,000 1.13 Example 6 form butylene oxide Synthesis a-1 diblock 0.18methanol 50.0 50.0 79,000 1.14 Example 7 form Synthesis a-2 diblock 0.45methanol 50.2 49.8 29,000 1.10 Example 8 form

Preparation of Directed Self-Assembling Composition for PatternFormation Examples 1 to 5 and Comparative Examples 1 to 2

The diblock copolymers were each dissolved in propylene glycol methylether acetate (PGMEA) to prepare 1% by mass solutions. These solutionswere filtered through a membrane filter having a pore size of 200 nm toprepare directed self-assembling compositions for pattern formation, andpatterns were formed according to the following method.

Pattern-Forming Method 1

On a 12-inch silicon wafer was spin-coated a composition for forming anunderlayer film containing a crosslinking agent using CLEAN TRACK ACT12(manufactured by Tokyo Electron Limited), followed by baking at 205° C.for 60 sec to provide an underlayer film having a film thickness of 77nm. Next, after an ArF resist composition containing an acid-labileresin, a photo acid generating agent and an organic solvent wasspin-coated on the underlayer film, prebaking (PB) was carried out at120° C. for 60 sec to provide a resist film having a film thickness of60 nm. Then, the resist film was exposed through a mask pattern usingArF Immersion Scanner (NSR S610C, manufactured by Nikon Corporation),under an optical condition involving NA of 1.30, CrossPole, and c of0.977/0.78. Thereafter, PEB was carried out at 115° C. for 60 sec, andthen a development with a 2.38% by mass aqueous tetramethylammoniumhydroxide solution at 23° C. for 30 sec, followed by washing with waterand drying gave a prepattern (1) with holes having a diameter of 75 nm/apitch of 150 nm. Subsequently, the prepattern was irradiated with anultraviolet ray of 254 nm under a condition of 150 mJ/cm², followed bybaking at 170° C. for 5 min to obtain a substrate for evaluations.

Next, each directed self-assembling composition for pattern formationwas coated on the substrate for evaluations so as to give a thickness of30 nm, and heated at 250° C. for 5 min to cause phase separation,whereby a microdomain structure was formed. Furthermore, afterirradiation with a radioactive ray of 254 nm at 3,000 mJ/cm², immersionin a solution of methyl isobutyl ketone (MIBK)/2-propanol (IPA)=2/8(mass ratio) for 5 min allowed methyl methacrylate phases to be removed,whereby a pattern (1) was formed.

Pattern-Forming Method 2

The pattern (2) was formed by an operation similar to thepattern-forming method 1 except that the shape of the mask pattern waschanged to give the prepattern (2) having a line of 75 nm and a pitch of150 nm.

Evaluations

The pattern (1) formed as described above was observed using aline-width measurement SEM (S-4800, manufactured by Hitachi, Ltd.), andthe width of a groove portion that looked white was measured todetermine a width (nm) of the microdomain structure.

The evaluation was made to be “favorable” when the width (nm) of themicrodomain structure was no greater than 30 nm, whereas the evaluationwas made to be “unfavorable” when the width (nm) of the microdomainstructure was greater than 30 nm or when formation of the microdomainstructure failed.

In addition, the pattern (2) formed as described above was observed fromabove the pattern using a scanning electron microscope (CG4000,manufactured by Hitachi High-Technologies Corporation), and the linewidths of the pattern were measured at arbitrary 10 points. From themeasurements of the line widths, 3 Sigma values were determined as adegree of distribution, and the 3 Sigma value was defined as LWR (nm).The evaluation was made to be favorable when LWR (nm) was no greaterthan 5 nm, whereas the evaluation was made to be unfavorable when LWR(nm) exceeded 5 nm or when formation of the microdomain structurefailed.

The results of evaluations of the width of microdomain structure and LWRare shown in Table 2. It is to be noted that “-” in Table 2 denotes afailure of the measurement of the width of the microdomain structure andLWR since a microdomain structure was not formed.

TABLE 2 Width of microdomain (A) structure Component Solvent (nm) LWR(nm) Example 1 A-1 PGMEA 14.0 4.2 Example 2 A-2 PGMEA 17.2 3.9 Example 3A-3 PGMEA 21.4 3.5 Example 4 A-4 PGMEA 14.9 4.2 Example 5 A-5 PGMEA 19.83.9 Example 6 A-6 PGMEA 29.5 3.4 Comparative a-1 PGMEA 20.9 6.5 Example1 Comparative a-2 PGMEA — — Example 2

As shown in Table 2, it was revealed that a sufficiently fine andfavorable microdomain structure was obtained when the directedself-assembling compositions for pattern formation of Examples wereused. According to the directed self-assembling compositions for patternformation of Comparative Examples, phase separation during patternformation was less likely to occur, and some of them resulted in failureto form the microdomain structure.

According to the embodiments of the present invention, a directedself-assembling composition for pattern formation enabling a patternhaving a sufficiently fine and favorable microdomain structure to beformed, and a pattern-forming method in which the same is used can beprovided. Therefore, the directed self-assembling composition forpattern formation and the pattern-forming method according to theembodiments of the present invention are suitably used in lithographyprocesses in manufacture of various types of electronic devices such assemiconductor devices and liquid crystal devices for which furtherminiaturization has been demanded.

Obviously, numerous modifications and variations of the presentinvention are possible in light of the above teachings. It is thereforeto be understood that within the scope of the appended claims, theinvention may be practiced otherwise than as specifically describedherein.

1. A directed self-assembling composition for pattern formationcomprising: a block copolymer comprising: a polystyrene block having astyrene unit; and a polyalkyl (meth)acrylate block having an alkyl(meth)acrylate unit, the block copolymer having a group that is bound toat least one end of a main chain of the block copolymer and thatincludes a hetero atom.
 2. The directed self-assembling composition forpattern formation according to claim 1, wherein the hetero atom is anoxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a tinatom, a silicon atom or a combination thereof.
 3. The directedself-assembling composition for pattern formation according to claim 1,wherein the group included in the block copolymer is represented by aformula (1):

wherein, in the formula (1), R¹ represents a single bond or a divalentorganic group having 1 to 30 carbon atoms; and R² represents a hydrogenatom or a monovalent organic group having 1 to 30 carbon atoms.
 4. Thedirected self-assembling composition for pattern formation according toclaim 1, wherein the alkyl (meth)acrylate unit is a methyl methacrylateunit.
 5. The directed self-assembling composition for pattern formationaccording to claim 1, wherein the block copolymer is a diblock copolymeror a triblock copolymer having a polystyrene block and a polyalkyl(meth)acrylate block.
 6. The directed self-assembling composition forpattern formation according to claim 1, wherein a molar ratio of styreneunits to alkyl (meth)acrylate units in the block copolymer is no lessthan 10/90 and no greater than 90/10.
 7. The directed self-assemblingcomposition for pattern formation according to claim 1, wherein thegroup included in the block copolymer is derived from an epoxy compound.8. A pattern-forming method comprising: providing a directedself-assembling film having a phase separation structure on a substrateusing the directed self-assembling composition for pattern formationaccording to claim 1; and removing a part of phases of the directedself-assembling film.
 9. The pattern-forming method according to claim8, wherein the method further comprises before providing the directedself-assembling film: providing an underlayer film on the substrate; andforming a prepattern on the underlayer film, wherein the directedself-assembling film is provided in a region compartmentalized by theprepattern on the underlayer film, and wherein the method furthercomprises after providing the directed self-assembling film, removingthe prepattern.
 10. The pattern-forming method according to claim 8,wherein the pattern obtained is a line-and-space pattern or a holepattern.